Reducing shunts in memories with phase-change material
US7161225B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 19, 2005 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Feb 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial layer may be reduced by providing a discontinuity or other feature that reduces or prevents conduction along said interfacial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.