Film for copper diffusion barrier
US7163889B2 · kind B2 · utility
25Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2005 |
| Grant date | Jan 16, 2007 |
| Priority date | — |
| Expiry date | Sep 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.