Device for ESD protection of an integrated circuit

US7164567B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andrej Litwin · Stockholm, SE
• Ola Pettersson · Järfälla, SE

Key dates

• Filing date: Jun 22, 2004
• Grant date: Jan 16, 2007
• Expiry date: Aug 4, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/911

Abstract

A device for ESD protection of a high frequency circuit (1) of a semiconductor device comprises first (3) and second (4) p-type and first (6) and second (5) n-type JFET's, wherein the first p-type JFET (3) is connected with its gate to a high voltage source, its source to an input/output pad (2) of the semiconductor device, and its drain to the source of the first n-type JFET (6), the second p-type JFET (4) is connected with its gate to the high voltage source, its source to the drain of the second n-type JFET (5), and its drain to an input/output terminal of the circuit (1), the first n-type JFET transistor (6) is connected with its gate to ground (GND), and its drain to the input/output terminal, and the second n-type JFET transistor (5) is connected with its gate to ground (GND), and its source to the input/output pad (2).