Phase change memory cell defined by a pattern shrink material process
US7166533B2 · kind B2 · utility
200Cited by
5References
38Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 8, 2005 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Apr 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
One embodiment of the present invention provides a memory cell device. The memory cell device includes a first electrode, a phase-change material adjacent the first electrode, and a second electrode adjacent the phase-change material. The phase-change material has a sublithographic width defined by a pattern shrink material process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.