Method of treatment of porous dielectric films to reduce damage during cleaning
US7169540B2 · kind B2 · utility
3Cited by
189References
28Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 11, 2003 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Jul 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device, method, and system for treating low-k dielectric material films to reduce damage during microelectronic component cleaning processes is disclosed. The current invention cleans porous low-k dielectric material films in a highly selectivity with minimal dielectric material damage by first treating microelectronic components to a passivating process followed by a cleaning solution process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.