Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US7169619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2002 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Aug 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02293
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
High quality epitaxial layers of monocrystalline oxide materials (24) can be grown overlying monocrystalline substrates (22) such as large silicon wafers. The monocrystalline oxide layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.