Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask

US7169716B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Rogalli · Rottenburg am Neckar, DE
• Lars Volkel · Dresden, DE

Key dates

• Filing date: Nov 29, 2004
• Grant date: Jan 30, 2007
• Expiry date: Jan 29, 2025

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/0395
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which substantially absorb incident light at 248 nm and are substantially transparent to incident light at 193 nm, and a second base polymer comprises aromatic parent structures (B) which substantially absorb incident light at 193 nm and are substantially transparent to incident light at 248 nm. If such a resist (100) is applied in a coat thickness of from 50 to 400 nm to a substrate and the proportion of the second base polymer having the aromatic parent structure is between 1 and 25 mol %, a relatively high structure contrast, better stability to etching and a reduction of defects are advantageously achieved in an exposure at a wavelength of 193 nm. Exposure over the entire depth range of the resist (100) is ensured thereby.