Semi-insulating GaN and method of making the same
US7170095B2 · kind B2 · utility
81Cited by
15References
112Claims
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Key dates
| Filing date | Jul 11, 2003 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Jul 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The large-area, semi-insulating gallium nitride is readily formed by doping the growing gallium nitride material during growth thereof with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.