Vertical type semiconductor device
US7170119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2004 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Aug 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/111
Abstract
In a vertical type MOSFET device having a super junction structure, in which a N conductive type column region and a P conductive type column region are alternately aligned, regarding to a distance between a terminal end of an active region and a terminal end of a column region, the terminal end of the column region is disposed at a position, which is separated from the active region terminal end by a distance obtained by subtracting a half of a width of the N conductive type column region from a distance corresponding to a depth of the column region. Thus, an electric field concentration at a specific portion in a region facing a narrow side of the column structure is prevented so that a breakdown voltage of the vertical type MOSFET is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.