Carbon nanotube energy well (CNEW) field effect transistor
US7170120B2 · kind B2 · utility
136Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | Mar 31, 2005 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Mar 31, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A structure to form an energy well within a Carbon nanotube is described. The structure includes a doped semiconductor region and an undoped semiconductor region. The Carbon nanotube is between the doped semiconductor region and the undoped semiconductor region. The structure also includes a delta doped semiconductor region. The undoped semiconductor region is between the Carbon nanotube and the delta doped region. The delta doped semiconductor region is doped opposite that of the doped semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.