Semiconductor device having a roughened surface
US7170172B2 · kind B2 · utility
9Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2002 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Dec 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.