Semiconductor apparatus
US7170177B2 · kind B2 · utility
0Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2005 |
| Grant date | Jan 30, 2007 |
| Priority date | — |
| Expiry date | Aug 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.