Optical element and method for its manufacture as well as lithography apparatus and method for manufacturing a semiconductor device

US7172788B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Andrey E. Yakshin · Nieuwegein, NL
• Eric Louis · IJsselstein, NL
• Frederik Bijkerk · Bosch en Duin, NL
• Marco Wedowski · Aalen, DE
• Roman Klein · Berlin, DE
• Frank Stietz · Kassel, DE

Key dates

• Filing date: Oct 2, 2002
• Grant date: Feb 6, 2007
• Expiry date: Oct 2, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/2495
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In order to reduce contamination of optical elements which comprise a multilayer system on a substrate, it is proposed that the layer material and/or the layer thickness of at least one layer of the multilayer system are/is selected such that the standing wave which forms during reflection of the irradiated operating wavelength, forms a node of the electrical field intensity (node condition) in the area of the free interface of the multilayer system. Furthermore, a method for determining a design of a multilayer system, as well as a manufacturing process and a lithography apparatus are described.