Method of making a nanogap for variable capacitive elements, and device having a nanogap
US7172917B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Apr 17, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/0271
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a variable capacitive device including providing a base silicon-bearing compound electrode which is vertically-inclined with respect to a substrate, depositing a sacrificial layer on the base electrode, depositing a silicon-bearing compound electrode on the sacrificial layer which is also vertically-inclined with respect to the substrate, and removing the sacrificial layer from between the base silicon-bearing compound electrode and the grown silicon-bearing compound electrode. A variable capacitive device having a fixed vertically-inclined silicon-bearing compound electrode and a movable vertically-inclined silicon-bearing compound electrode produced by arranging a sacrificial layer on a base silicon-bearing compound electrode, depositing a grown silicon-bearing compound electrode on the sacrificial layer, and etching the sacrificial layer. Between the fixed silicon-bearing compound and the movable silicon-bearing compound electrode is a nanogap, the nanogap having a uniform width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.