Method of manufacturing devices comprising conductive nano-dots, and devices comprising same
US7173304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2005 |
| Grant date | Feb 6, 2007 |
| Priority date | — |
| Expiry date | Jul 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6893
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method is disclosed that may include forming a first layer of insulating material above a semiconducting substrate, forming an aluminum oxide layer above the first layer of insulating material, forming a plurality of spaced-apart dots of material on the aluminum oxide layer, forming a second layer of insulating material on portions of the aluminum oxide layer not covered by the spaced-apart dots of material, forming a conductive layer above the second layer of insulating material and the plurality of spaced-apart dots of material, and removing excess portions of the layer of conductive material and the second layer of insulating material. A device is disclosed that may include a substrate and a floating gate electrode positioned above a tunnel insulation layer, the floating gate electrode including a layer of insulating material and a plurality of spaced-apart dots of material, each of which have a conductive nano-dot positioned on the dot of material, the dots of material and the conductive nano-dots being positioned in the layer of insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.