Technique for forming transistors having raised drain and source regions with different heights

US7176110B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Ralf van Bentum · Radebeul, DE
• Scott Luning · San Francisco, US
• Thorsten Kammler · Radeberg, DE

Key dates

• Filing date: Jun 7, 2004
• Grant date: Feb 13, 2007
• Expiry date: Jun 8, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

The height of epitaxially grown semiconductor regions in extremely scaled semiconductor devices may be adjusted individually for different device regions in that two or more epitaxial growth steps may be carried out, wherein an epitaxial growth mask selectively suppresses the formation of a semiconductor region in a specified device region. In other embodiments, a common epitaxial growth process may be used for two or more different device regions and subsequently a selective oxidation process may be performed on selected device regions so as to precisely reduce the height of the previously epitaxially grown semiconductor regions in the selected areas.