Method of manufacturing Group III nitride substrate and semiconductor device
US7176115B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 18, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Apr 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a manufacturing method that allows a Group III nitride substrate with a low dislocation density to be manufactured, and a semiconductor device that is manufactured using the manufacturing method. The manufacturing method includes, in an atmosphere including nitrogen, allowing a Group III element and the nitrogen to react with each other in an alkali metal melt to cause generation and growth of Group III nitride crystals. In the manufacturing method, a plurality of portions of a Group III nitride semiconductor layer are prepared, selected as seed crystals, and used for at least one of the generation and the growth of the Group III nitride crystals, and then surfaces of the seed crystals are brought into contact with the alkali metal melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.