Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications
US7176129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2002 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Apr 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that allows for the subsequent formation of metallized posts and metallized moats in the porous regions; and (2) a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.