Plasma detemplating and silanol capping of porous dielectric films
US7176144B1 · kind B1 · utility
87Cited by
58References
41Claims
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Key dates
| Filing date | Feb 23, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Mar 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielectric matrix. Porogen removal and silanol capping can occur concurrently or sequentially. If performed sequentially, silanol capping is performed without first exposing the dielectric matrix to moisture or ambient conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.