Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US7176403B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 22, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Oct 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32642
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.