Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy
US7179754B2 · kind B2 · utility
33Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Dec 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for forming a nitrided gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via a smooth-varying modulated RF power source to reduce electron temperature spike. Field effect transistor channel mobility and gate leakage current results are improved when the power source is smooth-varying modulated, as compared to square-wave modulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.