Double-decker MRAM cell with rotated reference layer magnetizations
US7180113B2 · kind B2 · utility
23Cited by
7References
14Claims
0Family size
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Key dates
| Filing date | Feb 10, 2005 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Apr 21, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A double-decker MRAM cell is provided, including a stacked structure of first and second magnetic tunnel junctions. Each magnetic tunnel junction includes first and second free and fixed magnetic regions made of magnetic material separated by a first and second tunneling barrier layers made of non-magnetic material. The fixed magnetic regions are pinned by at least one pinning layer. The first and second fixed magnetizations are oriented in a same magnetic anisotropy axis and are inclined under an angle relative to at least one of said first and second free magnetizations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.