MRAM storage device
US7180160B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Jul 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
Abstract
A MRAM storage device comprises a substrate, on/above of which a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and a plurality of isolation diodes are provided. Each memory cell forms a resistive cross point of one word line and one bit line, respectively. Each memory cell is connected to one isolation diode such that a unidirectional conductive path is formed from a word line to a bit line via the corresponding memory cell, respectively. The substrate, at least a part of the word lines or at least a part of the bit lines, and the isolation diodes are realized as one common monocrystal semiconductor block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.