Series diode thermally assisted MRAM
US7180770B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2005 |
| Grant date | Feb 20, 2007 |
| Priority date | — |
| Expiry date | Mar 24, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.