Method for forming isolation film in semiconductor device
US7183173B2 · kind B2 · utility
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3References
7Claims
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Assignee
Inventor
Key dates
| Filing date | Dec 22, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Jan 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an isolation film of a semiconductor device is disclosed which includes forming trenches in a semiconductor substrate, forming a first HDP oxide film in the formed trenches, performing an etch-back process using a mixing gas of C2F6 gas and O2 gas to form vertical walls in the first HDP oxide films and forming a second HDP oxide film on the resulting structure. The characteristics of a device can be improved because diffusion of F ions in a FSG film formed on the first HDP oxide film is minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.