Method for fabricating contact-making connections

US7183188B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Matthias Kronke · Dresden, DE
• Joachim Patzer · Rohrbach, DE

Key dates

• Filing date: Jan 12, 2005
• Grant date: Feb 27, 2007
• Expiry date: Mar 5, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76858
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention provides a method for fabricating contact-making connections, having the steps of: a) providing a substrate (101) with electronic circuit units (102a, 102b) arranged thereon, an intermediate layer (103) filling an interspace between the electronic circuit units (102a, 102b); an insulation layer (104) being deposited on the electronic circuit units (102a, 102b) and on the intermediate layer (103); a masking layer (105) being deposited on the insulation layer (104); and the masking layer (105) being patterned with a through-plating structure (106); b) patterning a contact-making region by means of the masking layer (105), a contact-making hole (112) being etched through the insulation layer (104) and the intermediate layer (103) as far as the substrate (101), a section of the substrate (101) being uncovered in accordance with the through-plating structure (106); c) filling the contact-making hole (112) with a through-plating material (108); d) polishing back the covering layer (107) deposited on the masking layer (105) as far as the masking layer (105); e) depositing a contact-making layer (109) on the masking layer (105) and the through-plating material, the contact-ma…