Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas
US7183227B1 · kind B1 · utility
7Cited by
112References
28Claims
0Family size
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Key dates
| Filing date | Jul 1, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Nov 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such low-mass fluent gases permits pressures to be maintained at relatively low levels in a substrate processing chamber, thereby improving the gapfill characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.