Patent · US Expired

Metal line having an increased resistance to electromigration along an interface of a dielectric barrier layer by implanting material into the metal line

US7183629B2 · kind B2 · utility

4Cited by

1References

12Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Hans-Juergen Engelmann · Dresden, DE
Ehrenfried Zschech · Radebeul, DE
Peter Huebler · Coswig, DE

Key dates

Filing date	Mar 30, 2004
Grant date	Feb 27, 2007
Priority date	—
Expiry date	Jan 25, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

During the formation of a metallization layer of a semiconductor device, a cap layer is formed above a metal line and subsequently an implantation process is performed so as to modify the metal in the vicinity of the interface between the cap layer and the metal line. Consequently, an improved behavior in view of electromigration of the metal line may be obtained, thereby increasing device reliability.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.