Electrical open/short contact alignment structure for active region vs. gate region
US7183780B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Feb 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for measuring alignment of polysilicon shapes to a silicon area. Each polysilicon shape in a first plurality of polysilicon shapes has a bridging vertex positioned near the silicon area. Each polysilicon shape in a second plurality of polysilicon shapes has a bridging vertex positioned near the silicon area. The second plurality of silicon shapes is positioned on the opposite side of the silicon area from the first plurality of silicon shapes. An electrical measurement of how many of the polysilicon shapes in the first plurality of polysilicon shapes and in the second plurality of polysilicon shapes provides a measurement of alignment of the polysilicon shapes and the silicon area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.