Plasma treatment apparatus
US7186315B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 1, 2003 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Apr 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32568
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided a plasma treatment apparatus that carries out plasma treatment on an article, with which it is possible to make the plasma density uniform. A plasma treatment vessel houses a semiconductor wafer and a treatment gas is introduced into the plasma treatment vessel. A lower electrode is provided inside the plasma treatment vessel and the semiconductor wafer is placed onto the lower electrode. An upper electrode that has a plurality of holes formed therein and has a dome shape that is upwardly convex, is provided above the lower electrode in the plasma treatment vessel. A height of the upper electrode from the lower electrode becomes greater from an outside of the lower electrode to a center of the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.