Process for deposition of semiconductor films
US7186582B2 · kind B2 · utility
12Cited by
41References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 6, 2005 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | May 6, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.