Method of fabricating trench junction barrier rectifier
US7186609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2002 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | May 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/676
Abstract
A Schottky rectifier includes a rectifying interface between a semiconductor body and a metal layer. Trenches are formed in the surface of the semiconductor body and regions of a conductivity type opposite to the conductivity type of the body are formed along the sidewalls and bottoms of the trenches, the regions forming PN junctions with the rest of the body. When the rectifier is reverse-biased, the depletion regions along the PN junctions merge to occupy the entire width of the mesas. The device is fabricated by implanting dopant directly through the sidewalls and bottoms of the trenches, by filling the trenches with a material containing dopant and causing the dopant to diffuse through the sidewalls and bottoms of the trenches, or by implanting and diffusing the dopant into a gate filling material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.