High-density germanium-on-insulator photodiode array
US7186611B2 · kind B2 · utility
20Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Sep 30, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a first source/drain (S/D) region, and a second S/D region connected to Vdd; forming a P-I-N Ge diode for each pixel as follows:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.