Formation of active area using semiconductor growth process without STI integration
US7186622B2 · kind B2 · utility
4Cited by
18References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Jul 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device can be formed without use of an STI process. An insulating layer is formed over a semiconductor body. Portions of the insulating layer are removed to expose the semiconductor body, e.g., to expose bare silicon. A semiconductor material, e.g., silicon, is grown over the exposed semiconductor body. A device, such as a transistor, can then be formed in the grown semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.