Deposition of amorphous silicon-containing films
US7186630B2 · kind B2 · utility
45Cited by
54References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 14, 2002 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Aug 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Preferably, the deposited amorphous silicon-containing film is annealed to produce crystalline regions over all or part of an underlying substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.