Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon
US7186632B2 · kind B2 · utility
3Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2003 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Mar 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28061
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a semiconductor device having a laminated gate electrode, a phosphorus-doped polysilicon is formed on a gate oxide film. A high-melting metal or a compound of a high-melting metal and silicon is formed on the polysilicon. Phosphorus is doped into the polysilicon so that a concentration of the phosphorus in the polysilicon at an interface between the polysilicon and the gate oxide film is 2×1020(1/cm3) or less. Then, thermal oxidation is carried out in a wet-hydrogen atmosphere containing water vapor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.