Silicon precursors for deep trench silicon etch processes
US7186660B2 · kind B2 · utility
2Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2003 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Sep 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to etch chemistry and methods for the etching of silicon substrates. The method is particularly useful for deep trench etching of silicon substrates and produces a trench having a high aspect ratio. In this type of deep trench etching, control of the profile of the trench is addressed by the etch chemistry disclosed herein. The etchant described in the present invention comprises silicon and a halogen component, and may be gaseous, liquid or solid. The etchant disclosed is also substantially free of hydrogen and carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.