Inventor · Beacon, NY, US

Siddhartha Panda

39Patents
10h-index
78Co-inventors
78Inventor score

Filing activity: Jul 11, 1994 → Mar 21, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7288482B2 Silicon nitride etching methods Electricity 247 Expired
US8783948B2 Flexible temperature sensor and sensor array Emerging Cross-Sectional Technologies 36 Active
US7176481B2 In situ doped embedded sige extension and source/drain for enhanced PFET performance Electricity 33 Expired
US7135724B2 Structure and method for making strained channel field effect transistor using sacrificial spacer Electricity 30 Expired
US5525320A Process for aluminum nitride powder production Chemistry; Metallurgy 24 Expired
US6743727B2 Method of etching high aspect ratio openings Electricity 15 Expired
US7087532B2 Formation of controlled sublithographic structures Electricity 12 Expired
US7709317B2 Method to increase strain enhancement with spacerless FET and dual liner process Electricity 12 Active
US7525161B2 Strained MOS devices using source/drain epitaxy Electricity 11 Active
US7442618B2 Method to engineer etch profiles in Si substrate for advanced semiconductor devices Electricity 11 Active
US7645656B2 Structure and method for making strained channel field effect transistor using sacrificial spacer Electricity 5 Active
US6709917B2 Method to increase the etch rate and depth in high aspect ratio structure Electricity 5 Expired
US6706586B1 Method of trench sidewall enhancement Electricity 4 Expired
US7459382B2 Field effect device with reduced thickness gate Electricity 4 Active
US7393746B2 Post-silicide spacer removal Electricity 4 Active
US7344991B2 Method and apparatus for multilayer photoresist dry development Human Necessities 3 Expired
US7405436B2 Stressed field effect transistors on hybrid orientation substrate Electricity 3 Expired
US7754615B2 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current Electricity 3 Active
US7977185B2 Method and apparatus for post silicide spacer removal Electricity 3 Expired
US10534541B2 Asynchronous discovery of initiators and targets in a storage fabric Physics 2 Active
US8892811B2 Reducing write amplification in a flash memory Physics 2 Active
US7687829B2 Stressed field effect transistors on hybrid orientation substrate Electricity 2 Active
US10719439B2 Garbage collection of a storage device Physics 2 Active
US8799631B2 Dynamically select operating system (OS) to boot based on hardware states Physics 2 Active
US7186660B2 Silicon precursors for deep trench silicon etch processes Electricity 2 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.