SONOS memory device
US7187030B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Jul 18, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0466
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A SONOS memory device, and a method of erasing data from the same, includes injecting charge carriers of a second sign into a trapping film, which traps charge carriers of a first sign to store data therein. The charge carriers of the second sign are generated by an electric field formed between one of a first and second electrodes contacting at least one bit line and a gate electrode contacting a word line. A blocking film may be provided between the gate electrode and the trapping film. The charge carriers of the second sign may be hot holes. This erasing improves erasing speed, thereby improving performance of the SONOS memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.