Electrostatic discharge conduction device and mixed power integrated circuits using same
US7187527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Mar 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/921
Abstract
A device for connection between supply buses in mixed power integrated circuits includes a diode in series with a transistor with an active p-ring in a semiconductor substrate. The active p-ring surrounds the source and drain of the transistor with a conductive region having the same conductivity type as the semiconductor substrate. A control circuit coupled to the p-ring applies a bias voltage in response to an ESD event affecting the first and second conductors. The bias voltage tends to inject carriers into the semiconductor substrate which enables discharge of the short voltage pulse via a parasitic SCR in the substrate from the anode of the diode to the source of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.