Process for forming portions of a compound material inside a cavity
US7188411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2003 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Oct 10, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49167
Abstract
A process for forming portions of a compound material within an electronic circuit includes the formation of a cavity having at least one opening facing onto an access surface. The cavity furthermore has an internal wall with at least one region made of an initial material (for example, silicon). A metal is deposited close to the region of initial material. The circuit is then heated to form a portion of the compound material (for example, a silicide) in the region of initial material inside the cavity. The compound material is formed from elements of the initial material and from some of the metal deposited. The excess metal that has not formed some of the compound material is then removed from the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.