Well for CMOS imager
US7190041B2 · kind B2 · utility
0Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2005 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Jan 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
Abstract
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.