Patent · US Expired

Semiconductor structure integrated under a pad

US7190077B2 · kind B2 · utility

3Cited by

1References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert Bauer · San Diego, US
Werner Ertle · Neubiberg, DE
Till Frohnmuller · Birkenfeld, DE
Bernd Goller · Otterfing, DE
Reinhard Greiderer · Munich, DE
Oliver Nagler · Munich, DE
Olaf Schmeckebier · Birkenfeld, DE
Wolfgang Stadler · Hilpoltstein, DE

Key dates

Filing date	Jun 12, 2003
Grant date	Mar 13, 2007
Priority date	—
Expiry date	Feb 13, 2024

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3025
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated semiconductor structure has a substrate, a semiconductor element located on the substrate, a pad metal, metal layers located between the pad metal and the substrate, and insulation layers that separate the metal layers from one another. The pad metal extends over at least—part of the semiconductor element.Below the surface of the pad metal, at least the top two metal layers include two or more adjacent interconnects.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.