Methods and apparatus for optimizing a substrate in a plasma processing system
US7190119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2003 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Oct 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H7/40
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An arrangement for processing a semiconductor substrate in a plasma processing system is disclosed. The arrangement includes providing a RF coupling structure having a first terminal and a second terminal, the first terminal being coupled with a first electrical measuring device, the second terminal being coupled with a second electrical measuring device. The arrangement also includes coupling a compensating circuit to the second terminal. The arrangement further includes providing a feedback circuit coupled to receive information from the first electrical measuring device and the second electrical measuring device, an output of the feedback circuit being employed to control the compensating circuit in order to keep a ratio between a first electrical value at the first terminal and a second electrical value at the second terminal substantially at a predefined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.