Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition
US7192626B2 · kind B2 · utility
75Cited by
10References
16Claims
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Key dates
| Filing date | Sep 24, 2003 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Sep 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.