NAND flash memory device capable of changing a block size
US7193897B2 · kind B2 · utility
17Cited by
4References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 15, 2005 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Jul 15, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a NAND flash memory device capable of changing a block size. In NAND flash memory devices capable of changing a block size, each memory block is divided into two page groups. Each memory block includes two block switches to select each page group in response to an external address signal. During an erasing operation, the block size is easily variable by applying an erasure voltage to one or two page groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.