Method and system for deposition tuning in an epitaxial film growth apparatus
US7195934B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2005 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Jul 11, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.