Plating-rinse-plating process for fabricating copper interconnects
US7198705B2 · kind B2 · utility
1Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2002 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Dec 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved copper ECD process. After the copper seed layer (116) is formed, a first portion of copper film (118) is plated onto the surface of the seed layer (116). The surface of the first portion of the copper film (118) is then rinsed to equalize the organic adsorption on all sites to prevent preferential copper growth in dense areas. After rinsing, the remaining copper of the copper film (118) is electrochemically deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.