Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor
US7199003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2003 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Dec 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.