Plasma assisted pre-planarization process
US7199018B2 · kind B2 · utility
1Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2004 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Aug 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.